Dual Silicon N-Channel MOSFET, 20 A, 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S412AATMA1

Channel Type:

N

Maximum Continuous Drain Current:

20 A

Maximum Drain Source Voltage:

40 V

Series:

OptiMOS™ -T2

Package Type:

SuperSO8 5 x 6 Dual

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

0.01219 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Transistor Material:

Silicon

Number of Elements per Chip:

2