N-Channel MOSFET, 9 A, 550 V, 3-Pin SOT-223 IPN50R650CEATMA1

Channel Type:

N

Maximum Continuous Drain Current:

9 A

Maximum Drain Source Voltage:

550 V

Series:

CoolMOS™ CE

Package Type:

SOT-223

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

650 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.5V

Minimum Gate Threshold Voltage:

2.5V

Maximum Power Dissipation:

5 W

Maximum Gate Source Voltage:

-30 V, +30 V

Width:

3.7mm

Number of Elements per Chip:

1

Maximum Operating Temperature:

+150 °C

Length:

6.7mm

Typical Gate Charge @ Vgs:

15 nC @ 10 V

Forward Diode Voltage:

0.84V

Minimum Operating Temperature:

-40 °C

Height:

1.7mm