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ipd50r1k4ceauma1 N-Channel MOSFET, 4.8 A, 500 V, 3-Pin DPAK Infineon IPD50R1K4CEAUMA1
ipd50r1k4ceauma1 N-Channel MOSFET, 4.8 A, 500 V, 3-Pin DPAK Infineon IPD50R1K4CEAUMA1
The Infineon 500V CoolMOS™ CE series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. This series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
Infineon

N-Channel MOSFET, 4.8 A, 500 V, 3-Pin DPAK IPD50R1K4CEAUMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD50R1K4CEAUMA1
Enrgtech Part No:
ET21617600
Warranty:
Manufacturer
£ 0.12

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Channel Type:

N

Maximum Continuous Drain Current:

4.8 A

Maximum Drain Source Voltage:

500 V

Package Type:

DPAK (TO-252)

Series:

CoolMOS™ CE

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

1.4 Ω

Maximum Gate Threshold Voltage:

3.5V

Transistor Material:

Si

Number of Elements per Chip:

1

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