

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
Zener-protected
Applications
Switching applications
Industry’s best FoM (figure of merit)
Ultra-low gate charge
Zener-protected
Applications
Switching applications

N-Channel MOSFET, 4 A, 3-Pin DPAK STD5N80K5
Manufacturer:
STMicroelectronics
Manufacturer Part No:
STD5N80K5
Enrgtech Part No:
ET11028112
Warranty:
Manufacturer
£ 0.57
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Channel Type:
N
Maximum Continuous Drain Current:
4 A
Package Type:
DPAK (TO-252)
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
1.73 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
5V
Minimum Gate Threshold Voltage:
3V
Maximum Power Dissipation:
60 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
±30 V