

N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

N-Channel MOSFET, 6.5 A, 20 V, 6-Pin Micro6 IRLMS2002TRPBF
Manufacturer:
Infineon
Manufacturer Part No:
IRLMS2002TRPBF
Enrgtech Part No:
ET13987844
Warranty:
Manufacturer
£ 0.41
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Channel Type:
N
Maximum Continuous Drain Current:
6.5 A
Maximum Drain Source Voltage:
20 V
Package Type:
Micro6
Series:
HEXFET
Mounting Type:
Surface Mount
Pin Count:
6
Maximum Drain Source Resistance:
45 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
1.2V
Minimum Gate Threshold Voltage:
0.6V
Maximum Power Dissipation:
2 W