Deliver to United Kingdom

ipd60n10s4l12atma1 Silicon N-Channel MOSFET, 60 A, 100 V, 3-Pin DPAK Infineon IPD60N10S4L12ATMA1
ipd60n10s4l12atma1 Silicon N-Channel MOSFET, 60 A, 100 V, 3-Pin DPAK Infineon IPD60N10S4L12ATMA1
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
Infineon

Silicon N-Channel MOSFET, 60 A, 100 V, 3-Pin DPAK IPD60N10S4L12ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD60N10S4L12ATMA1
Enrgtech Part No:
ET21632803
Warranty:
Manufacturer
£ 0.45

Checking for live stock

Channel Type:

N

Maximum Continuous Drain Current:

60 A

Maximum Drain Source Voltage:

100 V

Series:

OptiMOS™

Package Type:

TO-252

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

0.012 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.1V

Number of Elements per Chip:

1

Transistor Material:

Silicon

Related products