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sihb085n60ef-ge3 Dual Silicon N-Channel MOSFET, 34 A, 650 V, 3-Pin D2PAK Vishay SIHB085N60EF-GE3
sihb085n60ef-ge3 Dual Silicon N-Channel MOSFET, 34 A, 650 V, 3-Pin D2PAK Vishay SIHB085N60EF-GE3
sihb085n60ef-ge3 Dual Silicon N-Channel MOSFET, 34 A, 650 V, 3-Pin D2PAK Vishay SIHB085N60EF-GE3
The Vishay EF series power MOSFET with fast body diode and 4 generation E series technology. It has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correctio Low effective capacitance
Avalanche energy rated
Low figure of merit
Vishay

Dual Silicon N-Channel MOSFET, 34 A, 650 V, 3-Pin D2PAK SIHB085N60EF-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIHB085N60EF-GE3
Enrgtech Part No:
ET26056154
Warranty:
Manufacturer
£ 3.55

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Channel Type:

N

Maximum Continuous Drain Current:

34 A

Maximum Drain Source Voltage:

650 V

Package Type:

TO-263

Mounting Type:

Surface Mount

Pin Count:

3

Channel Mode:

Enhancement

Number of Elements per Chip:

2

Transistor Material:

Silicon

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