N-Channel MOSFET, 20 A, 30 V, 8-Pin SOIC IRF7832TRPBF

Channel Type:

N

Maximum Continuous Drain Current:

20 A

Maximum Drain Source Voltage:

30 V

Package Type:

SOIC

Series:

HEXFET

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

4.8 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.32V

Minimum Gate Threshold Voltage:

1.39V

Maximum Power Dissipation:

2.5 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Number of Elements per Chip:

1

Transistor Material:

Si

Maximum Operating Temperature:

+155 °C

Length:

5mm

Width:

4mm

Typical Gate Charge @ Vgs:

34 nC @ 4.5 V

Height:

1.5mm

Minimum Operating Temperature:

-55 °C