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iptg011n08nm5atma1 N-Channel MOSFET, 408 A, 80 V, 8-Pin PG HSOG-8 (TOLG) Infineon IPTG011N08NM5ATMA1
iptg011n08nm5atma1 N-Channel MOSFET, 408 A, 80 V, 8-Pin PG HSOG-8 (TOLG) Infineon IPTG011N08NM5ATMA1
The Infineon OptiMOS power MOSFET IPTG011N08NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 80 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board High efficiency and lower EMI
High performance capability
Infineon

N-Channel MOSFET, 408 A, 80 V, 8-Pin PG HSOG-8 (TOLG) IPTG011N08NM5ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPTG011N08NM5ATMA1
Enrgtech Part No:
ET22536313
Warranty:
Manufacturer
£ 2.22

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Channel Type:

N

Maximum Continuous Drain Current:

408 A

Maximum Drain Source Voltage:

80 V

Series:

OptiMOS™ 5

Package Type:

PG HSOG-8 (TOLG)

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

0.0011 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.3V

Number of Elements per Chip:

1

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