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fdb28n30tm N-Channel MOSFET, 28 A, 300 V, 3-Pin D2PAK onsemi FDB28N30TM
fdb28n30tm N-Channel MOSFET, 28 A, 300 V, 3-Pin D2PAK onsemi FDB28N30TM
fdb28n30tm N-Channel MOSFET, 28 A, 300 V, 3-Pin D2PAK onsemi FDB28N30TM
UniFET™ N-Channel MOSFET, Fairchild Semiconductor UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
onsemi

N-Channel MOSFET, 28 A, 300 V, 3-Pin D2PAK FDB28N30TM

Manufacturer:
onsemi
Manufacturer Part No:
FDB28N30TM
Enrgtech Part No:
ET14518485
Warranty:
Manufacturer
£ 1.68

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Channel Type:

N

Maximum Continuous Drain Current:

28 A

Maximum Drain Source Voltage:

300 V

Series:

UniFET

Package Type:

D2PAK (TO-263)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

129 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

3V

Maximum Power Dissipation:

250 W

Transistor Configuration:

Single

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