Infineon OptiMOS™ N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BSS119NH6327XTSA1

Infineon OptiMOS™ N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BSS119NH6327XTSA1

Manufacturer:
Manufacturer Part No:
BSS119NH6327XTSA1
Enrgtech Part No:
ET13799954
Warranty:
Manufacturer
£ 0.1000
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Channel Type:
N
Maximum Continuous Drain Current:
190 mA
Maximum Drain Source Voltage:
100 V
Package Type:
SOT-23
Series:
OptiMOS™
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
10 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.3V
Minimum Gate Threshold Voltage:
1.3V
Maximum Power Dissipation:
500 mW
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V
Typical Gate Charge @ Vgs:
0.6 nC @ 10 V
Length:
2.9mm
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Material:
Si
Width:
1.3mm
Height:
1mm
Minimum Operating Temperature:
-55 °C
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0900766b8132f051.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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