Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220AB RFP12N10L
Manufacturer:
onsemi
Manufacturer Part No:
RFP12N10L
Enrgtech Part No:
ET14543717
Warranty:
Manufacturer
£ 0.75
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Channel Type:
N
Maximum Continuous Drain Current:
12 A
Maximum Drain Source Voltage:
100 V
Package Type:
TO-220AB
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
200 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
60 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-10 V, +10 V
