N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK IPB80N06S207ATMA1

Channel Type:

N

Maximum Continuous Drain Current:

80 A

Maximum Drain Source Voltage:

55 V

Package Type:

D2PAK (TO-263)

Series:

OptiMOS™

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

6.6 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2.1V

Maximum Power Dissipation:

250 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Transistor Material:

Si

Width:

9.25mm

Typical Gate Charge @ Vgs:

86 nC @ 10 V

Length:

10mm

Number of Elements per Chip:

1

Maximum Operating Temperature:

+175 °C

Height:

4.4mm

Minimum Operating Temperature:

-55 °C