P-Channel MOSFET, 195 A, 30 V, 8-Pin PowerPAK SO-8 SIRA99DP-T1-GE3

Channel Type:

P

Maximum Continuous Drain Current:

195 A

Maximum Drain Source Voltage:

30 V

Package Type:

PowerPAK SO-8

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

2.6 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.5V

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

104 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +16 V

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

172.5 nC @ 10 V

Length:

5.99mm

Maximum Operating Temperature:

+150 °C

Width:

5mm

Height:

1.07mm

Minimum Operating Temperature:

-55 °C

Forward Diode Voltage:

1.1V