N-Channel MOSFET, 9.9 A, 200 V, 3-Pin TO-220FP IRLI640GPBF

Channel Type:

N

Maximum Continuous Drain Current:

9.9 A

Maximum Drain Source Voltage:

200 V

Package Type:

TO-220FP

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

180 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

40 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-10 V, +10 V

Typical Gate Charge @ Vgs:

66 nC @ 10 V

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Minimum Operating Temperature:

-55 °C

Height:

9.8mm