SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150°C
Typ. RDS(on) = 64 m
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
These Devices are Pb−Free
Typical Applications
Automotive On Board Charger
Automotive DC/DC Converter for HEV
Typ. RDS(on) = 64 m
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
These Devices are Pb−Free
Typical Applications
Automotive On Board Charger
Automotive DC/DC Converter for HEV
N-Channel MOSFET, 40 A, 650 V, 3-Pin D2PAK NVB082N65S3F
Manufacturer:
onsemi
Manufacturer Part No:
NVB082N65S3F
Enrgtech Part No:
ET17796731
Warranty:
Manufacturer
£ 3.30
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
40 A
Maximum Drain Source Voltage:
650 V
Package Type:
D2PAK (TO-263)
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
82 mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation:
313 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
±30 V
Width:
9.65mm
