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ipd082n10n3gatma1 N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK Infineon IPD082N10N3GATMA1
ipd082n10n3gatma1 N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK Infineon IPD082N10N3GATMA1
The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). Ideal for high-frequency switching and synchronous rectification. Potential Applications includes Class D audio amplifiers, Isolated DC-DC converters etc. It has 175 °C operating temperature
Qualified according to JEDEC for target applications
Infineon

N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK IPD082N10N3GATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD082N10N3GATMA1
Enrgtech Part No:
ET21606532
Warranty:
Manufacturer
£ 0.88

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Channel Type:

N

Maximum Continuous Drain Current:

80 A

Maximum Drain Source Voltage:

100 V

Series:

OptiMOS™ 3

Package Type:

TO-252

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

0.0082 O

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.5V

Transistor Material:

Si

Number of Elements per Chip:

1

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