N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD35N10S3L26ATMA1

Channel Type:

N

Maximum Continuous Drain Current:

35 A

Maximum Drain Source Voltage:

100 V

Package Type:

DPAK (TO-252)

Series:

OptiMOS™-T

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

0.026 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.4V

Number of Elements per Chip:

1

Transistor Material:

Si