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ipg20n10s4l22atma1 Dual Silicon N-Channel MOSFET, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual Infineon IPG20N10S4L22ATMA1
ipg20n10s4l22atma1 Dual Silicon N-Channel MOSFET, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual Infineon IPG20N10S4L22ATMA1
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
Infineon

Dual Silicon N-Channel MOSFET, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S4L22ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPG20N10S4L22ATMA1
Enrgtech Part No:
ET21632810
Warranty:
Manufacturer
£ 0.42

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Channel Type:

N

Maximum Continuous Drain Current:

20 A

Maximum Drain Source Voltage:

100 V

Series:

CoolMOS™

Package Type:

SuperSO8 5 x 6 Dual

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

0.022 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.1V

Transistor Material:

Silicon

Number of Elements per Chip:

2

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