Infineon CoolMOS™ Dual Silicon N-Channel MOSFET, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S4L22ATMA1

For more information please check the datasheets.

Infineon CoolMOS™ Dual Silicon N-Channel MOSFET, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S4L22ATMA1

Manufacturer:

Infineon

Manufacturer Part No:

IPG20N10S4L22ATMA1

Enrgtech Part No:

ET21632810

Warranty:

Manufacturer

£ 0.4300

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Channel Type:

Maximum Continuous Drain Current:

20 A

Maximum Drain Source Voltage:

100 V

Series:

CoolMOS™

Package Type:

SuperSO8 5 x 6 Dual

Mounting Type:

Surface Mount

Pin Count:

Maximum Drain Source Resistance:

0.022 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.1V

Number of Elements per Chip:

Transistor Material:

Silicon

A700000007835283.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon CoolMOS™ Dual Silicon N-Channel MOSFET, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S4L22ATMA1

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