Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L
The ON Semiconductor Silicon Carbide (SiC) MOSFET is a N channel MOSFET with 650 V drain to source voltage and 348 W power dissipation, TO247-3L packaging and this device is Halide free and RoHS compliant with exemption 7a, Pb−Free 2LI.
Ultra Low Gate Charge 164 nC
Low capacitance 278 pF
100 percent avalanche tested
Temperature 175°C
RDS(on) 19 mohm
Low capacitance 278 pF
100 percent avalanche tested
Temperature 175°C
RDS(on) 19 mohm
N-Channel MOSFET, 99 A, 650 V, 3-Pin TO-247 NTHL025N065SC1
Manufacturer:
onsemi
Manufacturer Part No:
NTHL025N065SC1
Enrgtech Part No:
ET23425033
Warranty:
Manufacturer
£ 8.66
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
99 A
Maximum Drain Source Voltage:
650 V
Package Type:
TO-247
Mounting Type:
Through Hole
Pin Count:
3
