The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected 629
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected 629
Dual N-Channel MOSFET, 72 A, 650 V, 3-Pin TO-247 STWA68N65DM6AG
Manufacturer:
STMicroelectronics
Manufacturer Part No:
STWA68N65DM6AG
Enrgtech Part No:
ET21639133
Warranty:
Manufacturer
£ 5.11
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
72 A
Maximum Drain Source Voltage:
650 V
Package Type:
TO-247
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
0.039 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.75V
Transistor Material:
Si
Number of Elements per Chip:
2
