N-Channel MOSFET, 195 A, 150 V, 3-Pin D2PAK IRFS4115TRLPBF

Channel Type:

N

Maximum Continuous Drain Current:

195 A

Maximum Drain Source Voltage:

150 V

Series:

HEXFET

Package Type:

D2PAK (TO-263)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

12.1 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

5V

Minimum Gate Threshold Voltage:

3V

Maximum Power Dissipation:

375 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Transistor Material:

Si

Number of Elements per Chip:

1

Width:

11.3mm

Typical Gate Charge @ Vgs:

77 nC @ 10 V

Maximum Operating Temperature:

+175 °C

Length:

10.67mm

Height:

4.83mm

Forward Diode Voltage:

1.3V

Minimum Operating Temperature:

-55 °C