The Infineon 62 mm 1200 V, 6 mΩ half bridge module with Cool Sic™ MOSFET.
High current density
Low switching losses
Superior gate oxide reliability
Highest robustness against humidity
Robust integrated body diode, and thus optimal thermal conditions
Low switching losses
Superior gate oxide reliability
Highest robustness against humidity
Robust integrated body diode, and thus optimal thermal conditions
N-Channel MOSFET, 250 A, 1200 V AG-62MM FF6MR12KM1BOSA1
Manufacturer:
Infineon
Manufacturer Part No:
FF6MR12KM1BOSA1
Enrgtech Part No:
ET21632866
Warranty:
Manufacturer
£ 242.08
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
250 A
Maximum Drain Source Voltage:
1200 V
Package Type:
AG-62MM
Series:
FF6MR
Mounting Type:
Screw Mount
Maximum Drain Source Resistance:
5.81 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3.45V
Number of Elements per Chip:
1
