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si2392bds-t1-ge3 Silicon N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-23 Vishay SI2392BDS-T1-GE3
si2392bds-t1-ge3 Silicon N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-23 Vishay SI2392BDS-T1-GE3
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon. TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Vishay

Silicon N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-23 SI2392BDS-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI2392BDS-T1-GE3
Enrgtech Part No:
ET28368831
Warranty:
Manufacturer
£ 0.40

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Channel Type:

N

Maximum Continuous Drain Current:

1.8 A

Maximum Drain Source Voltage:

100 V

Package Type:

SOT-23

Mounting Type:

Surface Mount

Pin Count:

3

Channel Mode:

Enhancement

Transistor Material:

Silicon

Number of Elements per Chip:

1

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