N-Channel MOSFET, 55 A, 100 V, 3-Pin D2PAK IRL2910STRLPBF

Channel Type:

N

Maximum Continuous Drain Current:

55 A

Maximum Drain Source Voltage:

100 V

Package Type:

D2PAK (TO-263)

Series:

HEXFET

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

40 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2V

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

200 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-16 V, +16 V

Transistor Material:

Si

Number of Elements per Chip:

1

Length:

10.67mm

Maximum Operating Temperature:

+175 °C

Typical Gate Charge @ Vgs:

140 nC @ 5 V

Width:

9.65mm

Height:

4.83mm

Minimum Operating Temperature:

-55 °C