N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK IRLR2905TRPBF

Channel Type:

N

Maximum Continuous Drain Current:

42 A

Maximum Drain Source Voltage:

55 V

Series:

HEXFET

Package Type:

DPAK (TO-252)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

40 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2V

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

110 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-16 V, +16 V

Width:

6.22mm

Typical Gate Charge @ Vgs:

48 nC @ 5 V

Length:

6.73mm

Transistor Material:

Si

Number of Elements per Chip:

1

Maximum Operating Temperature:

+175 °C

Height:

2.39mm

Minimum Operating Temperature:

-55 °C