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ixfn210n30p3 IXYS HiperFET, Polar3 Type N-Channel MOSFET, 192 A, 300 V Enhancement, 4-Pin SOT-227 IXFN210N30P3
ixfn210n30p3 IXYS HiperFET, Polar3 Type N-Channel MOSFET, 192 A, 300 V Enhancement, 4-Pin SOT-227 IXFN210N30P3

IXYS Type N-Channel MOSFET, 192 A, 300 V Enhancement, 4-Pin SOT-227 IXFN210N30P3

RoHs Compliant

Ixys IXFN210N30P3 IXYS HiperFET, Polar3 Type N-Channel MOSFET, 192 A, 300 V Enhancement, 4-Pin SOT-227 IXFN210N30P3

Manufacturer:
Ixys
Manufacturer Part No:
IXFN210N30P3
Enrgtech Part No:
ET11320757
Warranty:
Manufacturer
230 - In Stock

Ships in 2-3 business days

Each

Quantity
Unit Price (ex VAT)
10
£ 27.61
Order Today!
From: United Kingdom
Est Ship Date: 08 Sep, 2026
Est Fastest Delivery: 09 Sep, 2026
Height:
9.6mm
Length:
38.23mm
Series:
HiperFET, Polar3
Pin Count:
4
Mount Type:
Panel
Channel Mode:
Enhancement
Channel Type:
Type N
Package Type:
SOT-227
Product Type:
MOSFET
Forward Voltage Vf:
1.5V
Automotive Standard:
No
Standards/Approvals:
No
Maximum Power Dissipation Pd:
1.5kW
Typical Gate Charge Qg @ Vgs:
268nC
Maximum Operating Temperature:
150°C
Minimum Operating Temperature:
-55°C
Maximum Drain Source Voltage Vds:
300V
Maximum Continuous Drain Current Id:
192A
Maximum Drain Source Resistance Rds:
14.5mΩ
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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