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sihf30n60e-ge3 N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220FP Vishay SIHF30N60E-GE3
sihf30n60e-ge3 N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220FP Vishay SIHF30N60E-GE3
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS). Features Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
Vishay

N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220FP SIHF30N60E-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIHF30N60E-GE3
Enrgtech Part No:
ET16723682
Warranty:
Manufacturer
£ 2.14

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Channel Type:

N

Maximum Continuous Drain Current:

29 A

Maximum Drain Source Voltage:

600 V

Package Type:

TO-220FP

Series:

E Series

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

125 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

37 W

Transistor Configuration:

Single

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