N-Channel MOSFET, 100 A, 25 V, 4-Pin LFPAK, SOT-669 PSMN0R9-25YLC,115

Channel Type:

N

Maximum Continuous Drain Current:

100 A

Maximum Drain Source Voltage:

25 V

Package Type:

LFPAK, SOT-669

Mounting Type:

Surface Mount

Pin Count:

4

Maximum Drain Source Resistance:

1.25 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

1.95V

Minimum Gate Threshold Voltage:

1.05V

Maximum Power Dissipation:

272 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Number of Elements per Chip:

1

Transistor Material:

Si

Width:

4.1mm

Typical Gate Charge @ Vgs:

110 nC @ 10 V

Length:

5mm

Maximum Operating Temperature:

+175 °C

Minimum Operating Temperature:

-55 °C

Height:

1.1mm