The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Worldwide best RDS(on) x area
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Zener-protected
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Zener-protected
N-Channel MOSFET, 6 A, 800 V, 3-Pin TO-220 STP80N900K6
Manufacturer:
STMicroelectronics
Manufacturer Part No:
STP80N900K6
Enrgtech Part No:
ET25872676
Warranty:
Manufacturer
£ 1.38
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
6 A
Maximum Drain Source Voltage:
800 V
Package Type:
TO-220
Mounting Type:
Through Hole
Pin Count:
3
Channel Mode:
Enhancement
Number of Elements per Chip:
1
Transistor Material:
Si
