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irf1010estrlpbf Silicon N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK Infineon IRF1010ESTRLPBF
irf1010estrlpbf Silicon N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK Infineon IRF1010ESTRLPBF
The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. Advanced process technology
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant
Infineon

Silicon N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK IRF1010ESTRLPBF

Manufacturer:
Infineon
Manufacturer Part No:
IRF1010ESTRLPBF
Enrgtech Part No:
ET21632835
Warranty:
Manufacturer
£ 0.41

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Channel Type:

N

Maximum Continuous Drain Current:

84 A

Maximum Drain Source Voltage:

60 V

Series:

HEXFET

Package Type:

D2PAK (TO-263)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

0.012 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Number of Elements per Chip:

1

Transistor Material:

Silicon

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