

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Advanced process technology
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant

Silicon N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK IRF1010ESTRLPBF
Manufacturer:
Infineon
Manufacturer Part No:
IRF1010ESTRLPBF
Enrgtech Part No:
ET21632835
Warranty:
Manufacturer
£ 0.41
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Channel Type:
N
Maximum Continuous Drain Current:
84 A
Maximum Drain Source Voltage:
60 V
Series:
HEXFET
Package Type:
D2PAK (TO-263)
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.012 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
1
Transistor Material:
Silicon