IXTY1R6N50D2 IXYS

This is manufactured by IXYS. The manufacturer part number is IXTY1R6N50D2. The FET features of the product include depletion mode. It has typical 24 weeks of manufacturer standard lead time. It features n-channel 500v 1.6a (tc) 100w (tc) surface mount to-252, (d-pak). Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 23.7nc @ 5v. It has a maximum Rds On and voltage of 2.3 ohm @ 800ma, 0v. It carries FET type n-channel. It is available in the standard package of 70. The ixys's product offers user-desired applications. The product has a 500v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 645pf @ 25v. The product is available in surface mount configuration. to-252, (d-pak) is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 1.6a (tc). The product carries maximum power dissipation 100w (tc). This product use mosfet (metal oxide) technology.

RoHs Compliant

IXYS IXTY1R6N50D2

Manufacturer:
IXYS
Manufacturer Part No:
IXTY1R6N50D2
Enrgtech Part No:
ET10863214
Warranty:
Manufacturer
£ 2.08
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FET Feature:
Depletion Mode
Manufacturer Standard Lead Time:
24 Weeks
Detailed Description:
N-Channel 500V 1.6A (Tc) 100W (Tc) Surface Mount TO-252, (D-Pak)
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
23.7nC @ 5V
Rds On (Max) @ Id, Vgs:
2.3 Ohm @ 800mA, 0V
FET Type:
N-Channel
Standard Package:
70
Manufacturer:
IXYS
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
645pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252, (D-Pak)
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
1.6A (Tc)
Power Dissipation (Max):
100W (Tc)
Technology:
MOSFET (Metal Oxide)
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IXT(Y,A,P)1R6N50D2(Datasheets)


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