APTMC120AM08CD3AG Microsemi Corporation
APTMC120AM08CD3AG Microsemi Corporation

This is manufactured by Microsemi Corporation. The manufacturer part number is APTMC120AM08CD3AG. The FET features of the product include standard. It has a maximum Rds On and voltage of 10 mohm @ 200a, 20v. It features mosfet array 2 n-channel (half bridge) 1200v (1.2kv) 250a 1100w chassis mount d3. The product's input capacitance at maximum includes 9500pf @ 1000v. The maximum gate charge and given voltages include 490nc @ 20v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 2.2v @ 10ma (typ). Furthermore, the product is active It is available in the standard package of 100. Moreover, the product comes in [Package/ Case]. d3 is the supplier device package value. It has typical 32 weeks of manufacturer standard lead time. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (half bridge). Its typical moisture sensitivity level is 1 (unlimited). The maximum power of the product is 1100w. The product has a 1200v (1.2kv) drain to source voltage. The continuous current drain at 25°C is 250a. The microsemi corporation's product offers user-desired applications.

RoHs Compliant

Microsemi Corporation APTMC120AM08CD3AG

Manufacturer:
Microsemi Corporation
Manufacturer Part No:
APTMC120AM08CD3AG
Enrgtech Part No:
ET11350074
Warranty:
Manufacturer
£ 995.39
Checking for live stock
FET Feature:
Standard
Rds On (Max) @ Id, Vgs:
10 mOhm @ 200A, 20V
Detailed Description:
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 250A 1100W Chassis Mount D3
Input Capacitance (Ciss) (Max) @ Vds:
9500pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs:
490nC @ 20V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
2.2V @ 10mA (Typ)
Part Status:
Active
Standard Package:
100
Package / Case:
D-3 Module
Supplier Device Package:
D3
Manufacturer Standard Lead Time:
32 Weeks
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Half Bridge)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power - Max:
1100W
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
250A
Manufacturer:
Microsemi Corporation


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