SI8802DB-T2-E1 Vishay Siliconix

This is manufactured by Vishay Siliconix. The manufacturer part number is SI8802DB-T2-E1. It has typical 46 weeks of manufacturer standard lead time. It features n-channel 8v 500mw (ta) surface mount 4-microfoot. The typical Vgs (th) (max) of the product is 700mv @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 6.5nc @ 4.5v. It has a maximum Rds On and voltage of 54 mohm @ 1a, 4.5v. It carries FET type n-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 8v drain to source voltage. The maximum Vgs rate is ±5v. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 4-microfoot is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product carries maximum power dissipation 500mw (ta). This product use mosfet (metal oxide) technology. Alternative Names include si8802db-t2-e1ct.

RoHs Compliant

Vishay Siliconix SI8802DB-T2-E1

Manufacturer:
Vishay Siliconix
Manufacturer Part No:
SI8802DB-T2-E1
Enrgtech Part No:
ET11386525
Warranty:
Manufacturer
£ 0.40
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Manufacturer Standard Lead Time:
46 Weeks
Detailed Description:
N-Channel 8V 500mW (Ta) Surface Mount 4-Microfoot
Vgs(th) (Max) @ Id:
700mV @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-XFBGA
Gate Charge (Qg) (Max) @ Vgs:
6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs:
54 mOhm @ 1A, 4.5V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
8V
Vgs (Max):
±5V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
4-Microfoot
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Packaging:
Cut Tape (CT)
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SI8802DB-T2-E1CT
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Si8802DB(Datasheets)


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