SI4712DY-T1-GE3 Vishay Siliconix

This is manufactured by Vishay Siliconix. The manufacturer part number is SI4712DY-T1-GE3. It features n-channel 30v 14.6a (tc) 2.5w (ta), 5w (tc) surface mount 8-so. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. Furthermore, the product is last time buy The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 28nc @ 10v. It has a maximum Rds On and voltage of 13 mohm @ 15a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1084pf @ 15v. The product is available in surface mount configuration. The product skyfet®, trenchfet®, is a highly preferred choice for users. 8-so is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 14.6a (tc). The product carries maximum power dissipation 2.5w (ta), 5w (tc). This product use mosfet (metal oxide) technology. Alternative Names include si4712dy-t1-ge3ct.

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Vishay Siliconix SI4712DY-T1-GE3

Manufacturer:
Vishay Siliconix
Manufacturer Part No:
SI4712DY-T1-GE3
Enrgtech Part No:
ET11503273
Warranty:
Manufacturer
£ 0.76
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Detailed Description:
N-Channel 30V 14.6A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Part Status:
Last Time Buy
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
28nC @ 10V
Rds On (Max) @ Id, Vgs:
13 mOhm @ 15A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1084pF @ 15V
Mounting Type:
Surface Mount
Series:
SkyFET®, TrenchFET®
Supplier Device Package:
8-SO
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
14.6A (Tc)
Power Dissipation (Max):
2.5W (Ta), 5W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
SI4712DY-T1-GE3CT
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Multiple Fabracation Changes09/Jul/2014(PCN Assembly/Origin)
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SI4712DY(Datasheets)


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