This is manufactured by Vishay Siliconix. The manufacturer part number is SI8812DB-T2-E1. It features n-channel 20v 500mw (ta) surface mount 4-microfoot. The typical Vgs (th) (max) of the product is 1v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 17nc @ 8v. It has a maximum Rds On and voltage of 59 mohm @ 1a, 4.5v. It carries FET type n-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±5v. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 4-microfoot is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product carries maximum power dissipation 500mw (ta). This product use mosfet (metal oxide) technology. Alternative Names include si8812db-t2-e1ct.

For more information please check the datasheets.

Vishay Siliconix SI8812DB-T2-E1

Manufacturer:

Vishay Siliconix

Manufacturer Part No:

SI8812DB-T2-E1

Enrgtech Part No:

ET11555305

Warranty:

Manufacturer

£ 0.42

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Detailed Description:

N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot

Vgs(th) (Max) @ Id:

1V @ 250µA

Part Status:

Active

Operating Temperature:

-55°C ~ 150°C (TJ)

Package / Case:

4-UFBGA

Gate Charge (Qg) (Max) @ Vgs:

17nC @ 8V

Rds On (Max) @ Id, Vgs:

59 mOhm @ 1A, 4.5V

FET Type:

N-Channel

Standard Package:

Manufacturer:

Vishay Siliconix

Drain to Source Voltage (Vdss):

20V

Vgs (Max):

±5V

Si8812DB(Datasheets)

Vishay Siliconix SI8812DB-T2-E1

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