SIE868DF-T1-GE3 Vishay Siliconix

This is manufactured by Vishay Siliconix. The manufacturer part number is SIE868DF-T1-GE3. It features n-channel 40v 60a (tc) 5.2w (ta), 125w (tc) surface mount 10-polarpak® (l). The typical Vgs (th) (max) of the product is 2.2v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 145nc @ 10v. It has a maximum Rds On and voltage of 2.3 mohm @ 20a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 6100pf @ 20v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 10-polarpak® (l) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 60a (tc). The product carries maximum power dissipation 5.2w (ta), 125w (tc). This product use mosfet (metal oxide) technology. Alternative Names include sie868df-t1-ge3ct.

RoHs Compliant

Vishay Siliconix SIE868DF-T1-GE3

Manufacturer:
Vishay Siliconix
Manufacturer Part No:
SIE868DF-T1-GE3
Enrgtech Part No:
ET11570865
Warranty:
Manufacturer
£ 2.23
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Detailed Description:
N-Channel 40V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
10-PolarPAK® (L)
Gate Charge (Qg) (Max) @ Vgs:
145nC @ 10V
Rds On (Max) @ Id, Vgs:
2.3 mOhm @ 20A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
6100pF @ 20V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
10-PolarPAK® (L)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Power Dissipation (Max):
5.2W (Ta), 125W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
SIE868DF-T1-GE3CT
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SIE868DF(Datasheets)


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