APTMC120AM25CT3AG Microsemi Corporation
APTMC120AM25CT3AG Microsemi Corporation

This is manufactured by Microsemi Corporation. The manufacturer part number is APTMC120AM25CT3AG. The FET features of the product include standard. It has a maximum Rds On and voltage of 25 mohm @ 80a, 20v. It features mosfet array 2 n-channel (half bridge) 1200v (1.2kv) 105a 500w chassis mount sp3. The product's input capacitance at maximum includes 3800pf @ 1000v. The maximum gate charge and given voltages include 197nc @ 20v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 2.2v @ 4ma (typ). Furthermore, the product is active It is available in the standard package of 100. Moreover, the product comes in [Package/ Case]. sp3 is the supplier device package value. It has typical 32 weeks of manufacturer standard lead time. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (half bridge). Its typical moisture sensitivity level is 1 (unlimited). The maximum power of the product is 500w. The product has a 1200v (1.2kv) drain to source voltage. The continuous current drain at 25°C is 105a. The microsemi corporation's product offers user-desired applications.

RoHs Compliant

Microsemi Corporation APTMC120AM25CT3AG

Manufacturer:
Microsemi Corporation
Manufacturer Part No:
APTMC120AM25CT3AG
Enrgtech Part No:
ET11591117
Warranty:
Manufacturer
£ 380.08
Checking for live stock
FET Feature:
Standard
Rds On (Max) @ Id, Vgs:
25 mOhm @ 80A, 20V
Detailed Description:
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 105A 500W Chassis Mount SP3
Input Capacitance (Ciss) (Max) @ Vds:
3800pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs:
197nC @ 20V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
2.2V @ 4mA (Typ)
Part Status:
Active
Standard Package:
100
Package / Case:
SP3
Supplier Device Package:
SP3
Manufacturer Standard Lead Time:
32 Weeks
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Half Bridge)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power - Max:
500W
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
105A
Manufacturer:
Microsemi Corporation


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