IXTY08N100D2 IXYS

This is manufactured by IXYS. The manufacturer part number is IXTY08N100D2. The FET features of the product include depletion mode. It has typical 24 weeks of manufacturer standard lead time. It features n-channel 1000v 800ma (tc) 60w (tc) surface mount to-252, (d-pak). Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 14.6nc @ 5v. It has a maximum Rds On and voltage of 21 ohm @ 400ma, 0v. It carries FET type n-channel. It is available in the standard package of 70. The ixys's product offers user-desired applications. The product has a 1000v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 325pf @ 25v. The product is available in surface mount configuration. to-252, (d-pak) is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 800ma (tc). The product carries maximum power dissipation 60w (tc). This product use mosfet (metal oxide) technology.

RoHs Compliant

IXYS IXTY08N100D2

Manufacturer:
IXYS
Manufacturer Part No:
IXTY08N100D2
Enrgtech Part No:
ET11746122
Warranty:
Manufacturer
£ 2.24
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FET Feature:
Depletion Mode
Manufacturer Standard Lead Time:
24 Weeks
Detailed Description:
N-Channel 1000V 800mA (Tc) 60W (Tc) Surface Mount TO-252, (D-Pak)
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
14.6nC @ 5V
Rds On (Max) @ Id, Vgs:
21 Ohm @ 400mA, 0V
FET Type:
N-Channel
Standard Package:
70
Manufacturer:
IXYS
Drain to Source Voltage (Vdss):
1000V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
325pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252, (D-Pak)
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
800mA (Tc)
Power Dissipation (Max):
60W (Tc)
Technology:
MOSFET (Metal Oxide)
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IXT(Y,A,P)08N100D2(Datasheets)


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