NVD5807NT4G ON Semiconductor

This is manufactured by ON Semiconductor. The manufacturer part number is NVD5807NT4G. It has typical 25 weeks of manufacturer standard lead time. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. Furthermore, the product is active The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 20nc @ 10v. It has a maximum Rds On and voltage of 31 mohm @ 5a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The on semiconductor's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 603pf @ 25v. The product is available in surface mount configuration. dpak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 23a (tc). The product carries maximum power dissipation 33w (tc). This product use mosfet (metal oxide) technology.

RoHs Compliant

ON Semiconductor NVD5807NT4G

Manufacturer:
ON Semiconductor
Manufacturer Part No:
NVD5807NT4G
Enrgtech Part No:
ET11794990
Warranty:
Manufacturer
£ 0.53
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Manufacturer Standard Lead Time:
25 Weeks
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
Rds On (Max) @ Id, Vgs:
31 mOhm @ 5A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
603pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
23A (Tc)
Power Dissipation (Max):
33W (Tc)
Technology:
MOSFET (Metal Oxide)
pdf icon
N(T,V)D5807N(Datasheets)
pdf icon
Mold Compound Update 25/Feb/2015(PCN Design/Specification)
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Mold Compound Revision 24/Apr/2015(PCN Design/Specification)


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