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SI7386DP-T1-E3 Vishay Siliconix

This is manufactured by Vishay Siliconix. The manufacturer part number is SI7386DP-T1-E3. It features n-channel 30v 12a (ta) 1.8w (ta) surface mount powerpak® so-8. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 18nc @ 4.5v. It has a maximum Rds On and voltage of 7 mohm @ 19a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. powerpak® so-8 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 12a (ta). The product carries maximum power dissipation 1.8w (ta). This product use mosfet (metal oxide) technology. Alternative Names include si7386dp-t1-e3ct.

RoHs Compliant

Vishay Siliconix SI7386DP-T1-E3

Manufacturer:
Vishay Siliconix
Manufacturer Part No:
SI7386DP-T1-E3
Enrgtech Part No:
ET12008594
Warranty:
Manufacturer
£ 1.25
Checking for live stock
Detailed Description:
N-Channel 30V 12A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 4.5V
Rds On (Max) @ Id, Vgs:
7 mOhm @ 19A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Power Dissipation (Max):
1.8W (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SI7386DP-T1-E3CT
pdf icon
Multiple Fabracation Changes09/Jul/2014(PCN Assembly/Origin)
pdf icon
Si7386DP(Datasheets)
pdf icon
1402 (UK2011-EN PDF)(Catalog Page)
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