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This is manufactured by Vishay Siliconix. The manufacturer part number is SIR410DP-T1-GE3. It features n-channel 20v 35a (tc) 4.2w (ta), 36w (tc) surface mount powerpak® so-8. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 41nc @ 10v. It has a maximum Rds On and voltage of 4.8 mohm @ 20a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1600pf @ 10v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. powerpak® so-8 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 35a (tc). The product carries maximum power dissipation 4.2w (ta), 36w (tc). This product use mosfet (metal oxide) technology. Alternative Names include sir410dp-t1-ge3ct.
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