SI4850EY-T1-E3 Vishay Siliconix

This is manufactured by Vishay Siliconix. The manufacturer part number is SI4850EY-T1-E3. It features n-channel 60v 6a (ta) 1.7w (ta) surface mount 8-so. The typical Vgs (th) (max) of the product is 3v @ 250µa. Furthermore, the product is active The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 27nc @ 10v. It has a maximum Rds On and voltage of 22 mohm @ 6a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 8-so is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 6a (ta). The product carries maximum power dissipation 1.7w (ta). This product use mosfet (metal oxide) technology. Alternative Names include si4850ey-t1-e3ct.

RoHs Compliant

Vishay Siliconix SI4850EY-T1-E3

Manufacturer:
Vishay Siliconix
Manufacturer Part No:
SI4850EY-T1-E3
Enrgtech Part No:
ET12124324
Warranty:
Manufacturer
£ 1.42
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Detailed Description:
N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SO
Vgs(th) (Max) @ Id:
3V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
27nC @ 10V
Rds On (Max) @ Id, Vgs:
22 mOhm @ 6A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
8-SO
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Power Dissipation (Max):
1.7W (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SI4850EY-T1-E3CT
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SI4850EY(Datasheets)
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1402 (UK2011-EN PDF)(Catalog Page)


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