SI4866BDY-T1-E3 Vishay Siliconix

This is manufactured by Vishay Siliconix. The manufacturer part number is SI4866BDY-T1-E3. It features n-channel 12v 21.5a (tc) 4.45w (tc) surface mount 8-so. The typical Vgs (th) (max) of the product is 1v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 80nc @ 4.5v. It has a maximum Rds On and voltage of 5.3 mohm @ 12a, 4.5v. It carries FET type n-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 12v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 5020pf @ 6v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 8-so is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 21.5a (tc). The product carries maximum power dissipation 4.45w (tc). This product use mosfet (metal oxide) technology. Alternative Names include si4866bdy-t1-e3ct.

RoHs Compliant

Vishay Siliconix SI4866BDY-T1-E3

Manufacturer:
Vishay Siliconix
Manufacturer Part No:
SI4866BDY-T1-E3
Enrgtech Part No:
ET12266954
Warranty:
Manufacturer
£ 1.18
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Detailed Description:
N-Channel 12V 21.5A (Tc) 4.45W (Tc) Surface Mount 8-SO
Vgs(th) (Max) @ Id:
1V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
80nC @ 4.5V
Rds On (Max) @ Id, Vgs:
5.3 mOhm @ 12A, 4.5V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
5020pF @ 6V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
8-SO
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
21.5A (Tc)
Power Dissipation (Max):
4.45W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
SI4866BDY-T1-E3CT
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SI4866BDY(Datasheets)


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