BFP840ESDH6327XTSA1 Infineon  NPN SiGe Bipolar Transistor, 35 mA, 2.25 V, 4-Pin SOT-343
BFP840ESDH6327XTSA1 Infineon  NPN SiGe Bipolar Transistor, 35 mA, 2.25 V, 4-Pin SOT-343

This is NPN SiGe Bipolar Transistor 35 mA 2.25 V 4-Pin SOT-343 manufactured by Infineon. The manufacturer part number is BFP840ESDH6327XTSA1. The transistor is a npn type. The given dimensions of the product include 2 x 1.25 x 0.8mm. The product is available in surface mount configuration. In addition, the height is 0.8mm. Furthermore, the product is 1.25mm wide. Its accurate length is 2mm. It has a maximum operating temperature of +150 °c.

RoHs Compliant

Infineon NPN SiGe Bipolar Transistor, 35 mA, 2.25 V, 4-Pin SOT-343

Manufacturer:
Infineon
Manufacturer Part No:
BFP840ESDH6327XTSA1
Enrgtech Part No:
ET20178073
Warranty:
Manufacturer
£ 0.27
Checking for live stock
Minimum DC Current Gain:
150
Transistor Type:
NPN
Dimensions:
2 x 1.25 x 0.8mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
75 mW
Maximum Collector Base Voltage:
2.9 V
Maximum Collector Emitter Voltage:
2.25 V
Maximum Operating Frequency:
80 GHz
Height:
0.8mm
Width:
1.25mm
Length:
2mm
Package Type:
SOT-343
Number of Elements per Chip:
1
Maximum DC Collector Current:
35 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
pdf icon
BFP840ESD, Robust Low Noise Silicon Germanium Bipolar RF Transistor(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)


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