BFR193WH6327XTSA1 Infineon  NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323
BFR193WH6327XTSA1 Infineon  NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323
BFR193WH6327XTSA1 Infineon  NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323

This is NPN RF Bipolar Transistor 80 mA 12 V 3-Pin SOT-323 manufactured by Infineon. The manufacturer part number is BFR193WH6327XTSA1. The transistor is a npn type. The given dimensions of the product include 2 x 1.25 x 0.8mm. The product is available in surface mount configuration. In addition, the height is 0.8mm. Furthermore, the product is 1.25mm wide. Its accurate length is 2mm. It has a maximum operating temperature of +150 °c.

RoHs Compliant

Infineon NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323

Manufacturer:
Infineon
Manufacturer Part No:
BFR193WH6327XTSA1
Enrgtech Part No:
ET20178141
Warranty:
Manufacturer
£ 0.09
Checking for live stock
Minimum DC Current Gain:
70
Transistor Type:
NPN
Dimensions:
2 x 1.25 x 0.8mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
580 mW
Maximum Collector Base Voltage:
20 V
Maximum Collector Emitter Voltage:
12 V
Maximum Operating Frequency:
8 GHz
Height:
0.8mm
Width:
1.25mm
Length:
2mm
Package Type:
SOT-323 (SC-70)
Number of Elements per Chip:
1
Maximum DC Collector Current:
80 mA
Maximum Emitter Base Voltage:
2 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
pdf icon
BFR193W Low Noise Silicon Bipolar RF Transistor Datasheet(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)


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