1N8026-GA GeneSiC Semiconductor

This is manufactured by GeneSiC Semiconductor. The manufacturer part number is 1N8026-GA. It has typical 18 weeks of manufacturer standard lead time. It features diode silicon carbide schottky 1200v 8a (dc) through hole to-257. The product operate at temperatures ranging from -55°c ~ 250°c. Furthermore, the product is active Moreover, the product comes in [Package/ Case]. Base Part Number: 1n8026. It has a trr (reverse recovery time) of 0ns. It is available in the standard package of 10. It features a 8a (dc) of average rectified current. The genesic semiconductor's product offers user-desired applications. The product has a maximum forward voltage of 1.6v @ 2.5a. While it has maximum reverse voltage of 1200v. Moreover, the product has a 237pf @ 1v, 1mhz capacitance. Its typical moisture sensitivity level is 1 (unlimited). 10µa @ 1200v is the reverse leakage value of a bespoke product. The product is available in through hole configuration. to-257 is the supplier device package value. In addition, tube is the available packaging type of the product. It is designed with a silicon carbide schottky diode. It has a robust speed of no recovery time > 500ma (io). Alternative Names include 1242-1113 1n8026ga.

GeneSiC Semiconductor 1N8026-GA

Manufacturer:
GeneSiC Semiconductor
Manufacturer Part No:
1N8026-GA
Enrgtech Part No:
ET10831049
Warranty:
Manufacturer
£ 163.69
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Manufacturer Standard Lead Time:
18 Weeks
Detailed Description:
Diode Silicon Carbide Schottky 1200V 8A (DC) Through Hole TO-257
Operating Temperature - Junction:
-55°C ~ 250°C
Part Status:
Active
Package / Case:
TO-257-3
Base Part Number:
1N8026
Reverse Recovery Time (trr):
0ns
Standard Package:
10
Current - Average Rectified (Io):
8A (DC)
Manufacturer:
GeneSiC Semiconductor
Voltage - Forward (Vf) (Max) @ If:
1.6V @ 2.5A
Voltage - DC Reverse (Vr) (Max):
1200V
Capacitance @ Vr, F:
237pF @ 1V, 1MHz
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Reverse Leakage @ Vr:
10µA @ 1200V
Mounting Type:
Through Hole
Supplier Device Package:
TO-257
Packaging:
Tube
Diode Type:
Silicon Carbide Schottky
Speed:
No Recovery Time > 500mA (Io)
Other Names:
1242-1113 1N8026GA
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1N8026-GA(Datasheets)


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