CUS520-H3F Toshiba Semiconductor and Storage CUS520,H3F

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is CUS520,H3F. It has typical 12 weeks of manufacturer standard lead time. Its typical moisture sensitivity level is 1 (unlimited). It features diode schottky 30v 200ma surface mount usc. Moreover, the product has a 17pf @ 0v, 1mhz capacitance. 5µa @ 30v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from 125°c (max). The product is available in surface mount configuration. Furthermore, the product is active While it has maximum reverse voltage of 30v. It is available in the standard package of 1. The product has a maximum forward voltage of 280mv @ 10ma. usc is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. It features a 200ma of average rectified current. Moreover, the product comes in [Package/ Case]. It is designed with a schottky diode. It has a robust speed of fast recovery = 200ma (io). Alternative Names include cus520h3fct. The toshiba semiconductor and storage's product offers user-desired applications.

RoHs Compliant

Toshiba Semiconductor and Storage CUS520,H3F

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
CUS520,H3F
Enrgtech Part No:
ET11223131
Warranty:
Manufacturer
£ 0.18
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Manufacturer Standard Lead Time:
12 Weeks
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Detailed Description:
Diode Schottky 30V 200mA Surface Mount USC
Capacitance @ Vr, F:
17pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr:
5µA @ 30V
Operating Temperature - Junction:
125°C (Max)
Mounting Type:
Surface Mount
Part Status:
Active
Voltage - DC Reverse (Vr) (Max):
30V
Standard Package:
1
Voltage - Forward (Vf) (Max) @ If:
280mV @ 10mA
Supplier Device Package:
USC
Packaging:
Cut Tape (CT)
Current - Average Rectified (Io):
200mA
Package / Case:
SC-76, SOD-323
Diode Type:
Schottky
Speed:
Fast Recovery = 200mA (Io)
Other Names:
CUS520H3FCT
Manufacturer:
Toshiba Semiconductor and Storage


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