TRS12E65C-S1Q Toshiba Semiconductor and Storage TRS12E65C,S1Q

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TRS12E65C,S1Q. It has typical 16 weeks of manufacturer standard lead time. It has a trr (reverse recovery time) of 0ns. It features diode silicon carbide schottky 650v 12a (dc) through hole to-220-2l. Moreover, the product has a 65pf @ 650v, 1mhz capacitance. 90µa @ 170v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from 175°c (max). The product is available in through hole configuration. Furthermore, the product is active While it has maximum reverse voltage of 650v. It is available in the standard package of 50. The product has a maximum forward voltage of 1.7v @ 12a. to-220-2l is the supplier device package value. In addition, tube is the available packaging type of the product. Its typical moisture sensitivity level is 1 (unlimited). It features a 12a (dc) of average rectified current. Moreover, the product comes in [Package/ Case]. It is designed with a silicon carbide schottky diode. It has a robust speed of no recovery time > 500ma (io). Alternative Names include trs12e65c,s1q(s trs12e65cs1q. The toshiba semiconductor and storage's product offers user-desired applications.

RoHs Compliant

Toshiba Semiconductor and Storage TRS12E65C,S1Q

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
TRS12E65C,S1Q
Enrgtech Part No:
ET11465779
Warranty:
Manufacturer
£ 10.12
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Manufacturer Standard Lead Time:
16 Weeks
Reverse Recovery Time (trr):
0ns
Detailed Description:
Diode Silicon Carbide Schottky 650V 12A (DC) Through Hole TO-220-2L
Capacitance @ Vr, F:
65pF @ 650V, 1MHz
Current - Reverse Leakage @ Vr:
90µA @ 170V
Operating Temperature - Junction:
175°C (Max)
Mounting Type:
Through Hole
Part Status:
Active
Voltage - DC Reverse (Vr) (Max):
650V
Standard Package:
50
Voltage - Forward (Vf) (Max) @ If:
1.7V @ 12A
Supplier Device Package:
TO-220-2L
Packaging:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io):
12A (DC)
Package / Case:
TO-220-2
Diode Type:
Silicon Carbide Schottky
Speed:
No Recovery Time > 500mA (Io)
Other Names:
TRS12E65C,S1Q(S TRS12E65CS1Q
Manufacturer:
Toshiba Semiconductor and Storage


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