1SS413CT-L3F Toshiba Semiconductor and Storage 1SS413CT,L3F

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 1SS413CT,L3F. It has typical 12 weeks of manufacturer standard lead time. Its typical moisture sensitivity level is 1 (unlimited). It features diode schottky 20v 50ma surface mount sod-882. Moreover, the product has a 3.9pf @ 0v, 1mhz capacitance. 500na @ 20v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from -55°c ~ 125°c. The product is available in surface mount configuration. Furthermore, the product is active While it has maximum reverse voltage of 20v. It is available in the standard package of 1. The product has a maximum forward voltage of 550mv @ 50ma. sod-882 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. It features a 50ma of average rectified current. Moreover, the product comes in [Package/ Case]. It is designed with a schottky diode. It has a robust speed of small signal =. Alternative Names include 1ss413ctl3fct. The toshiba semiconductor and storage's product offers user-desired applications.

RoHs Compliant

Toshiba Semiconductor and Storage 1SS413CT,L3F

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
1SS413CT,L3F
Enrgtech Part No:
ET12291478
Warranty:
Manufacturer
£ 0.26
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Manufacturer Standard Lead Time:
12 Weeks
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Detailed Description:
Diode Schottky 20V 50mA Surface Mount SOD-882
Capacitance @ Vr, F:
3.9pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr:
500nA @ 20V
Operating Temperature - Junction:
-55°C ~ 125°C
Mounting Type:
Surface Mount
Part Status:
Active
Voltage - DC Reverse (Vr) (Max):
20V
Standard Package:
1
Voltage - Forward (Vf) (Max) @ If:
550mV @ 50mA
Supplier Device Package:
SOD-882
Packaging:
Cut Tape (CT)
Current - Average Rectified (Io):
50mA
Package / Case:
SOD-882
Diode Type:
Schottky
Speed:
Small Signal =
Other Names:
1SS413CTL3FCT
Manufacturer:
Toshiba Semiconductor and Storage


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